Semiconductor memory device

ABSTRACT

There is provided a control circuit ( 409 ) for fetching a result of a comparison of a part of bits of entry data with a corresponding bit of comparison data and prohibiting a comparison of residual bits in the entry data with the corresponding bit of the comparison data when the result of the comparison is mismatched, and the comparison of the residual bits in the entry data with the corresponding bit of the comparison data is prohibited. Consequently, the number of signal lines to be activated in one cycle of a comparing operation is decreased. Thus, a reduction in a consumed power can be achieved.

CLAIM OF PRIORITY

The present application claims priority from Japanese application JP2004-005308 filed on Jan. 13, 2004, and Japanese applicationJP2004-265297 filed on Sep. 13, 2004, the content of which is herebyincorporated by reference into this application.

FIELD OF THE INVENTION

The present invention relates to a semiconductor memory device, andfurthermore, to a technique for reducing a consumed power and afluctuation in a consumed current and to a technique which iseffectively applied to a CAM (Content Addressable Memory), for example.

BACKGROUND OF THE INVENTION

A CAM has been known as a memory to be used in a router for relaying apacket between different network addresses and selecting a direction inan internet communication network. As an example of the CAM, there hasbeen known a memory of a ternary type which serves to store the 2-bitinformation of a data comparison mask in a memory cell and to output theresult of a comparison with input data to a comparison match line (forexample, see Patent Document 1).

In an LSI for a CAM which compares data having a large capacity,hundreds to thousands of CAM macro cells of approximately 64 entries by72 bits are provided, for example, and a search table of several kentries is constituted wholly. The CAM macro cell uses, as a mainstream,a method of precharging a match signal line and activating a comparisondata line when comparing data for a comparison with the internal data ofa memory cell, and discharging the electric charge of the match signalline even if one bit is mismatched. As a whole, a very small number ofdata are matched and most of data are mismatched. For this reason, inthe case in which data in all entries on a chip are compared with eachother, the charge/discharge of the electric charges of the comparisondata line and the match signal line is repeated every cycle because mostof the data are mismatched. As a countermeasure, for example, there hasbeen proposed a method of dividing comparison data into a plurality ofportions and comparing them (for example, Patent Document 2). Accordingto this method, a second comparing match signal line is precharged onlywhen the divided data are matched with each other and the precharging isnot carried out when they are mismatched based on the result of a firstcomparison for the divided data. Thus, the number of thecharging/discharging operations of the match signal line is decreasedand an operating current is reduced.

Moreover, there has been known a technique for cascade connecting aplurality of CAM chips to increase the number of entries when using therespective CAM chips as a system (for example, Patent Documents 3 to 5and Non-Patent Document 1).

Patent Document 1: U.S. Pat. No. 6,154,384 Specification

Patent Document 2: U.S. Pat. No. 6,242,280 Specification

Patent Document 3: U.S. Pat. No. 5,930,359 Specification

Patent Document 4: US Patent Application Laid-Open No. 2004/0001380Specification

Patent Document 5 US Patent Application Laid-Open No. 2004/0042241A1Specification

Non-Patent Document 1 ISSCC 2004/Session 11/DRAM/11.5, “A 143 MHz1.1W4.5 Mb Dynamic TCAM with Hierarchical Searching and Shift RedundancyArchitecture”, 2004 IEEE ISSCC pp. 208-209, 522-523

SUMMARY OF THE INVENTION

The inventor of the application investigated the operating current of anLSI for a CAM. Consequently, the charge/discharge of the electriccharges of a match signal line and a comparison data line is dominant,and the operating current is greatly increased with an increase in aspeed and integration. According to the technique described in thePatent Document 2, the charging/discharging current of a match signalline can be reduced and a comparison data line is operated every cycle.For this reason, a reduction in the charging/discharging current cannotbe expected. Moreover, the operating current of a CAM portion isproportional to a search rate and the current of the LSI greatlyfluctuates when the search rate is changed. Therefore, a supply voltagefluctuates so that the malfunction of a circuit might be caused. Thechange of the search rate is caused when the degree of congestion of anetwork fluctuates or a search is temporarily stopped in order to changethe data of the CAM portion in the case in which the CAM portion is usedfor a communication.

A CAM macro cell is conventionally suitable for a use in a router toselect a path on a net and to carry out the filing of transmitted data.In such a use, conventionally, the bit width of data is comparativelysmall. Also in the conventional technologies such as the PatentDocuments 1 to 5 and the Non-Patent Document 1, therefore, there havenot been sufficiently considered an enhancement in a throughput in thelayout technique of the CAM macro cell and a technique for reducing aconsumed power. In recent years, however, an increase in a bit width to576 bits in an IPV6 protocol is greatly required as in a CAM for arouter, for example, and the amount of information to be transmittedalso tends to be increased. For this reason, it is particularlynecessary to enhance the throughput by the layout technique of the CAMportion and to reduce the consumed power.

It is an object of the invention to provide a technique for reducing aconsumed power.

It is another object of the invention to provide a technique forreducing a fluctuation in a consumed current.

It is a further object of the invention to provide a technique forenhancing the throughput of a CAM portion.

The above and other objects and novel features of the invention will beapparent from the description of this specification and the accompanyingdrawings.

The summary of the typical invention disclosed in the invention will bebriefly described below.

More specifically, a semiconductor memory device which includes a CAMportion capable of holding entry data and can compare input comparisondata with the entry data and can output a result of the comparison,comprises a control circuit for fetching a result of a comparison of apart of bits of the entry data with a corresponding bit of thecomparison data and prohibiting a comparison of residual bits in theentry data with the corresponding bit of the comparison data when theresult of the comparison is mismatched.

According to the means described above, the control circuit fetches theresult of the comparison of the part of the bits of the entry data withthe corresponding bit of the comparison data, and prohibits thecomparison of the residual bits in the entry data with the correspondingbit of the comparison data when the result of the comparison ismismatched. Thus, the comparison of the residual bits in the entry datawith the corresponding bit of the comparison data is prohibited.Consequently, it is possible to decrease the number of signal lines tobe activated in one cycle of a comparing operation, thereby achieving areduction in a consumed power.

Moreover, there is provided a control circuit for fetching a result of acomparison of a bit of a former stage portion in the entry data with acorresponding bit of the comparison data and hindering a bit of a latterstage portion in the entry data from being fetched into the CAM portion,there by prohibiting a comparison of the bit of the latter stage portionin the entry data with the corresponding bit of the comparison data whenthe result of the comparison is mismatched.

According to the means described above, the control circuit fetches theresult of the comparison of the bit of the former stage portion in theentry data with the corresponding bit of the comparison data, andhinders the bit of the latter stage portion in the entry data from beingfetched into the CAM portion when the result of the comparison ismismatched. Consequently, it is possible to decrease the number ofsignal lines to be activated in one cycle of a comparing operation,thereby achieving a reduction in a consumed power.

In this case, an operation for comparing the bit of the former stageportion in the entry data with the corresponding bit of the comparisondata and an operation for comparing the bit of the latter stage portionin the entry data with the corresponding bit of the comparison data arepipeline operated. Consequently, it is possible to achieve anenhancement in the efficiency of the comparing operation.

In order to further reduce a consumed current, it is preferable toprovide a precharge circuit capable of precharging only a match signalline of a latter stage portion in an entry which is matched by thecomparison of the bit of the former stage portion in the entry data withthe corresponding bit of the comparison data.

In the case in which a first circuit for precharging a match signal linein the latter stage portion every cycle is provided, there is provided asecond circuit for discharging the match signal line of the latter stageportion in an entry which is mismatched by the comparison in the formerstage portion.

In order to reduce the deviation of a logic in the entry data, it ispreferable that even number bits in the entry data should be allocatedto the former stage portion in the entry data and odd number bits in theentry data should be allocated to the latter stage portion in the entrydata.

It is possible to provide a controller for generating a search requestto the CAM portion. The controller can be constituted to include searchrate setting means capable of setting a search rate having a level forsuppressing a fluctuation in a current.

The search rate setting means can be constituted to include an externalterminal for fetching a control signal which can control a search rateof the CAM portion and holding means capable of holding the controlsignal.

Moreover, a semiconductor memory device which includes a CAM portioncapable of holding entry data and can compare input comparison data withthe entry data and can output a result of the comparison, comprises acontroller for generating a search request to the CAM portion, thecontroller including search rate setting means capable of setting asearch rate having a level for suppressing a fluctuation in a current.

According to the means described above, the search rate setting meanscan set a search rate having a level for suppressing a fluctuation in acurrent. By carrying out such setting, a current generated by the searchoperation can be always caused to flow. Thus, the fluctuation in thecurrent can be suppressed.

In a semiconductor memory device which includes a CAM portion capable ofholding entry data, and can compare input comparison data with the entrydata and can output a result of the comparison, furthermore, the CAMportion can be divided into a plurality of blocks capable of comparingthe comparison data with the entry data respectively, and each of theblocks can be divided into a plurality of subblocks. The subblock can beconstituted to include a latch circuit capable of sequentiallytransmitting the comparison data from a block positioned on one of endsides of the CAM portion toward a block positioned on the other end sideof the CAM portion synchronously with a transmitted clock signal, and acontrol logic for fetching a result of a comparison of a bit of a formerstage portion in the entry data with a corresponding bit of thecomparison data and prohibiting a comparison of a bit of a latter stageportion in the entry data with the corresponding bit of the comparisondata when the result of the comparison is mismatched. If a design forone block is completed, consequently, it is possible to easily increasethe number of entries by arranging the design corresponding to aplurality of blocks. In addition, the subblock is provided with thelatch circuit capable of sequentially transmitting the comparison datafrom the block positioned on one of the end sides of the CAM portiontoward the block positioned on the other end side of the CAM portionsynchronously with the transmitted clock signal. Thus, a pipelineoperation between the blocks can be carried out.

There is provided the control logic for fetching the result of thecomparison of the bit of the former stage portion in the entry data withthe corresponding bit of the comparison data and prohibiting thecomparison of the bit of the latter stage portion in the entry data withthe corresponding bit of the comparison data when the result of thecomparison is mismatched. Consequently, it is possible to decrease thenumber of the signal-lines to be activated in one cycle of the comparingoperation, thereby achieving a reduction in a consumed power.

In this case, an operation for comparing the bit of the former stageportion in the entry data with the corresponding bit of the comparisondata and an operation for comparing the bit of the latter stage portionin the entry data with the corresponding bit of the comparison data arepipeline operated synchronously with the clock signal. In other words,the pipeline operation between the blocks and the pipeline operation forcomparing the bit of the latter stage portion in the entry data with thecorresponding bit of the comparison data are carried out synchronouslywith the clock signal. Consequently, it is possible to achieve anenhancement in the throughput of the CAM portion.

Moreover, it is possible to provide a plurality of priority encoderportions corresponding to the blocks. The priority encoder portion canbe constituted to include a priority encoder for outputting a matchsignal capable of deciding whether or not match data are present in acorresponding block, a match address signal indicative of an addresswhen data are matched, and a multiple match signal capable of making adecision when a plurality of match data are present from informationtransmitted from the corresponding block, and an interblock prioritycontrol circuit capable of outputting the output signal of the priorityencoder to a block in a latter stage.

The interblock priority control circuit can be constituted to include afirst OR gate capable of obtaining an OR logic of a match signaltransmitted from the priority encoder and a match signal fetched from ablock in a former stage and outputting the OR logic to a block in alatter stage, a second OR gate capable of obtaining an OR logic of amultiple match signal transmitted from the priority encoder and amultiple match signal fetched from the block in the former stage andoutputting the OR logic to the block in the latter stage, and a selectorcapable of selectively outputting, to the block in the latter stage, amatch address signal transmitted from the priority encoder and a matchaddress signal fetched from the block in the former stage in response tothe match signal fetched from the block in the former stage.

The subblock can be constituted to include a first subblock to besynchronized with a rise timing of the clock signal and a secondsubblock to be synchronized with a fall timing of the clock signal inthe pipeline operation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing an example of the structure of an LSIfor a CAM according to an example of a semiconductor integrated circuitin accordance with the invention,

FIG. 2 is a block diagram showing an example of the structure of a CAMmacro cell array,

FIG. 3 is a block diagram showing an example of the structure of a powercontroller included in the LSI for a CAM,

FIG. 4 is a circuit diagram showing an example of the structure of theCAM macro cell,

FIG. 5 is a circuit diagram showing an example of the structure of amain part in FIG. 4,

FIG. 6 is a circuit diagram showing an example of the structure of themain part in FIG. 4,

FIG. 7 is an operation timing chart showing the structure illustrated inFIG. 6,

FIG. 8 is a circuit diagram showing another example of the structure ofthe main part in FIG. 4,

FIG. 9 is an operation timing chart showing the structure illustrated inFIG. 8,

FIG. 10 is an explanatory diagram showing the activating area of acomparing circuit illustrated in FIG. 6,

FIG. 11 is an explanatory diagram showing the activating area of acomparing circuit illustrated in FIG. 8,

FIG. 12 is a block diagram showing an example of the structure of a mainpart in FIG. 3,

FIG. 13 is a truth table in a circuit illustrated in FIG. 3,

FIG. 14 is an explanatory chart showing a relationship between a searchrate and a source current in the LSI for a CAM,

FIG. 15 is an explanatory chart showing a relationship between a searchrequest rate to the LSI for a CAM and a CAM activation rate,

FIG. 16 is an explanatory diagram showing another example of thestructure of the CAM macro cell array,

FIG. 17 is a circuit diagram showing an example of the structure of asubblock in the CAM macro cell array,

FIG. 18 is a block diagram showing an example of the structure of anencoder portion included in the LSI for a CAM,

FIG. 19 is a circuit diagram showing an example of the structure of aninterblock priority control circuit included in the encoder portion,

FIG. 20 is a timing chart showing a search operation in the CAM macrocell array,

FIG. 21 is an explanatory diagram showing the order of an operation inthe CAM macro cell array,

FIG. 22 is an explanatory diagram showing another example of thestructure of the CAM macro cell array,

FIG. 23 is an explanatory diagram showing the order of an operation inthe CAM macro cell array illustrated in FIG. 22,

FIG. 24 is an operation timing chart for the CAM macro cell arrayillustrated in FIG. 22,

FIG. 25 is an explanatory diagram showing another example of thestructure of the CAM macro cell array,

FIG. 26 is an explanatory diagram showing the order of an operation inthe CAM macro cell array illustrated in FIG. 25,

FIG. 27 is a circuit diagram showing an example of the structure of asubblock in the CAM macro cell array illustrated in FIG. 25,

FIG. 28 is a circuit diagram showing an example of the structure of anintersubblock search result totaling logic portion in the CAM macro cellarray illustrated in FIG. 25, and

FIG. 29 is an operation timing chart showing a main part in the CAMmacro cell array illustrated in FIG. 25.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 shows an LSI for a CAM according to an example of a semiconductormemory device in accordance with the invention.

The LSI for a CAM shown in FIG. 1 is not particularly restricted butcomprises an address buffer 1, a data input/output buffer 2, a commandbuffer 3, a CAM macro cell array 4, a priority encoder 5, a powercontroller 10 and an OR gate 11, and is formed on a semiconductorsubstrate such as a monocrystalline silicon substrate by a well-knownsemiconductor integrated circuit manufacturing technique.

The address buffer 1 has a function of transmitting an address signalinput through an address input terminal T1 to the CAM macro cell array4. The data input/output buffer 2 has a function of transmitting datainput through a data input/output terminal T2 to the CAM macro cellarray 4 and has a function of outputting data read from the CAM macrocell array 4 through the data input/output terminal T2 to an outside.The command buffer 3 transmits a command input through a command inputterminal T3 to the CAM macro cell array 4 and the power controller 10.The command input through the command input terminal T3 includes a readenable signal RE indicative of the validity of a data read from the CAMmacro cell array 4, a write enable signal WE indicative of the validityof a data write to the CAM macro cell array 4, and a command searchenable signal CD_SE indicative of the validity of a search by a command.The CAM macro cell array 4 is constituted with a plurality of CAM macrocells 40 arranged in an array as shown in FIG. 2, for example. Thepriority encoder 5 has a function of outputting any of match addressoutputs and match status outputs from the CAM macro cells 40 in the CAMmacro cell array 4 which has a high priority from output terminals T4and T5 to the outside. The power controller 10 can generate a dummysearch request to a CAM in such a manner that a search rate has apredetermined value or more, thereby generating a power control searchenable signal PC_SE for reducing a fluctuation in a source current inthe LSI. The command search enable signal CD_SE and the power controlsearch enable signal PC_SE are transmitted as a search enable signal SEthrough the OR gate 11 to the CAM macro cell array 4.

FIG. 4 typically shows one of the structures of the CAM macro cells.

The CAM macro cell 40 shown in FIG. 4 is not particularly restricted buthas a 64-entry by 72-bit structure. The comparison of the bit of aformer stage portion in the entry data with the corresponding bit of thecomparison data and the comparison of the bit of a latter stage portionin the entry data with the corresponding bit of the comparison data arecarried out by a pipeline processing. For this reason, a division into afirst memory cell group 431 and a second memory cell group 432 iscarried out. Both the first memory cell group 431 and the second memorycell group 432 have a 64-entry by 36-bit structure, which is notparticularly restricted.

The first memory cell group 431 includes a plurality of memory cells MCprovided in the cross portions of a plurality of word lines WL-1, WL-2,. . . , WL-n and a plurality of bit lines BL and a plurality ofcomparison data lines CD which are provided to cross. The word linesWL-1, WL-2, . . . , WL-n are selectively driven to a predetermined levelin response to a signal output from a decoder 401 for decoding an inputaddress signal. The bit lines BL are coupled to a sense amplifier 402and data read from the first memory cell group 431 are amplified by thesense amplifier 402 and are then output. The comparison data lines CDare coupled to a comparison data amplifier 404 and comparison dataamplified by the comparison data amplifier 404 are supplied to thecomparison data lines CD. In the first memory cell group 431, aplurality of match signal lines ML1-1, ML1-2, . . . , ML1-n are providedin parallel with the word lines WL-1, WL-2, WL-n and a match signal tobe the result of the comparison of the bit of the former stage portionin the entry data with the corresponding bit of the comparison data isobtained by the match signal lines ML1-1, ML1-2, . . . , ML1-n. Thematch signals obtained by the match signal lines ML1-1, ML1-2, . . . ,ML1-n are transmitted to latch circuits 417-1, 417-2, . . . , 417-n in alatter stage through buffers 419-1, 419-2, . . . , 419-n respectivelyand are then latched therein. The signals (match signals) output fromthe latch circuits 417-1, 417-2, . . . , 417-n are input to a controlcircuit 409 in the latter stage. The control circuit 409 has a functionof asserting a mismatch signal DIS to have a low level when all of thematch signals output from the latch circuits 417-1, 417-2, . . . , 417-nare set to have the low level. The bit lines BL are coupled to a writeamplifier 405 and write data amplified by the write amplifier 405 aretransmitted to the bit lines BL so that data can be written to each ofthe memory cells MC in the first memory cell group 431.

A pulse generator circuit 410 is provided. In the pulse generatorcircuit 410, a precharge signal PCG, a clock signal CK1 and a resetsignal RESET are generated. The operation of a p-channel type MOStransistor for precharging is controlled in response to the prechargesignal PCG, the operations of the latch circuits 417-1, 417-2, . . . ,417-n are controlled in response to the clock signal CK1, and thecontrol circuit 409 is reset in response to the reset signal RESET.

The second memory cell group 432 includes a plurality of memory cells MCprovided in the cross portions of a plurality of word lines WL-1, WL-2,. . . , WL-n and a plurality of bit lines BL and a plurality ofcomparison data lines CD which are provided to cross. The bit lines BLare coupled to a sense amplifier 403 and data read from the secondmemory cell group 432 are amplified by the sense amplifier 403 and arethen output. The comparison data lines CD are coupled to a comparisondata amplifier 406 and comparison data amplified by the comparison dataamplifier 406 are supplied to the comparison data lines CD. Thecomparison data amplifier 406 is activated to supply comparison data tothe comparison data line CD when the mismatch signal DIS sent from thecontrol circuit 409 has a high level. When the mismatch signal DIS sentfrom the control circuit 409 has a low level, however, the comparisondata amplifier 406 is brought into an inactive state and the comparisondata are not supplied to the comparison data line CD. In other words,when the mismatch signal DIS sent from the control circuit 409 has ahigh level, a comparison with data stored in the second memory cellgroup 432 is not carried out. The comparison data amplifier 406 isformed by a plurality of AND gates 624 provided corresponding to thecomparison data lines.

In the second memory cell group 432, a plurality of match signal linesML2-1, ML2-2, . . . , ML2-n is provided in parallel with the word linesWL-1, WL-2, . . . , WL-n, and match signals to be the result of thecomparison of the bit of a former stage portion in the entry data withthe corresponding bit of the comparison data are obtained by the matchsignal lines ML2-1, ML2-2, . . . , ML2-n. The match signal lines ML-1,ML-2, . . . , ML-n are transmitted to an encoder 408 and are encodedtherein so that match address outputs and match status outputs areobtained. The bit lines BL are coupled to a write amplifier 407 andwrite data amplified by the write amplifier 407 are transmitted to thebit lines BL so that data can be written to each of memory cells MC inthe second memory cell group 432.

A latch circuit 411 is provided and an address signal ADR is fetchedthrough the latch circuit 411. The address signal ADR thus fetched istransmitted to the decoder 401. A latch circuit 412 is provided and aread enable signal RE indicative of the validity of a read operation isfetched through the latch circuit 412. The read enable signal RE thusfetched is transmitted to the sense amplifiers 402 and 403. A latchcircuit 413 is provided. The latch circuit 413 fetches comparison dataCD<0:71> having a 72-bit structure, for example. Comparison datacorresponding to even number 36 bits in the comparison data CD<0:71>having the 72-bit structure are transmitted to the write amplifier 405for a write to the first memory cell group 431, and furthermore, aretransmitted to the comparison data amplifier 404 for a comparison withdata stored in the first memory cell group 431, which is notparticularly restricted. Moreover, comparison data corresponding to oddnumber 36 bits in the comparison data CD<0:71> having the 72-bitstructure are transmitted to the write amplifier 407 for a write to thesecond memory cell group 432, and furthermore, are transmitted to thecomparison data amplifier 406 through a latch circuit 416 for acomparison with the data stored in the first memory cell group 431.Latch circuits 414 and 421 are provided. The latch circuits 414 and 421fetch a search enable signal SE indicative of the validity of acomparing operation. The search enable signal SE thus fetched isutilized for activating the comparison data amplifiers 404 and 406. Alatch circuit 415 is provided. The latch circuit 415 fetches a writeenable signal WE indicative of the validity of a write operation. Thewrite enable signal WE thus fetched is used for activating the writeamplifiers 405 and 406. Each of the latch circuits 411, 412, 413, 414,415, 416 and 421 is operated synchronously with a clock signal CK.

FIG. 5 typically shows an example of the structure of one of the memorycells MC.

The structure shown in FIG. 5 is of a ternary type. A pair of bit linesBL include bit lines BL1 and BL1*. In storage portions M1 and M2, a pairof bit lines BL1 and BL1* are shared. Therefore, a word line WL isprovided with a word line WL-1-1 for normal data and a word line WL-1-2for mask data, and a word line driving cycle is shifted so thatdifferent data from each other can be written to the storage portions M1and M2. Inverters 502 and 503 are coupled like a loop so that thestorage portion M1 is formed. One of the storage nodes of the storageportion M1 is coupled to the bit line BL1 through an n-channel type MOStransistor 501 to be a transfer unit. The other storage node of thestorage portion M1 is coupled to the bit line BL1* through an n-channeltype MOS transistor 504 to be the transfer unit. Moreover, inverters 506and 507 are coupled like a loop so that the storage portion M2 isformed. One of the storage nodes of the storage portion M2 is coupled tothe bit line BL1 through an n-channel type MOS transistor 505 to be thetransfer unit. The other storage node of the storage portion M2 iscoupled to the bit line BL1* through an n-channel type MOS transistor508 to be the transfer unit. The inverters 502, 503, 506 and 507 areconstituted by connecting the p-channel type MOS transistor and then-channel type MOS transistor in series, respectively. Moreover,n-channel type MOS transistors 509 and 510 are connected in series sothat a first comparing circuit is formed, and n-channel type MOStransistors 511 and 512 are connected in series so that a secondcomparing circuit is formed. The gate electrode of the n-channel typeMOS transistor 509 is coupled to one of the storage nodes of the storageportion M1, and the gate electrode of the n-channel type MOS transistor510 is coupled to a comparison data line CDAT. The gate electrode of then-channel type MOS transistor 511 is coupled to one of the storage nodesof the storage portion M2, and the gate electrode of the n-channel typeMOS transistor 512 is coupled to a comparison data line CDAB. Thecomparison of comparison data fetched through the comparison data linesCDAT and CDAB with the data stored in the storage portions M1 and M2 iscarried out by the first comparing circuit (509, 510) and the secondcomparing circuit (511, 512). The result of the comparison is fetchedthrough the match signal line ML1-1.

FIG. 6 shows an example of the detailed structure of the main part inFIG. 4.

The buffer 419-1 is constituted by connecting two n-channel type MOStransistors 634 and 635 in series. The signal of the match signal lineML1-1 is transmitted to the gate electrode of the n-channel type MOStransistor 634. A clock signal CK1 is supplied to the gate electrode ofthe n-channel type MOS transistor 635. When the clock signal CK1 has ahigh level, the n-channel type MOS transistor 635 is conducted and then-channel type MOS transistor 634 is driven corresponding to the signallevel of the match signal line ML1-1 so that a signal can be transmittedto the latch circuit 417-1. Other buffer circuits 418-2 to 418-n arealso constituted in the same manner as a buffer circuit 418-1. The latchcircuit 417-1 is formed by coupling two inverters 631 and 632 like aloop. The other latch circuits 417-2 to 417-n are also constituted inthe same manner as the latch circuit 417-1.

The control circuit 409 is provided corresponding to the latch circuits417-1 to 417-n, and includes a plurality of precharge circuits 641 forcontrolling the precharge of the match signal lines ML2-1 to ML2-n basedon the output signals of the corresponding latch circuits and a mismatchsignal forming circuit 642 for forming a mismatch signal DIS based onthe output signals of the latch circuits 417-1 to 417-n. The prechargecircuits 641 have identical structures to each other. As typically shownin an example of the structure of one of the precharge circuits 641,p-channel type MOS transistors 601 and 602 and n-channel type MOStransistors 603 and 604 are connected in series. The gate electrodes ofthe p-channel type MOS transistor 602 and the n-channel type MOStransistor 603 are connected to a storage node LT1 of the latch circuit417-1 in common so that they function as inverters for logicallyinverting and outputting the output signal of the storage node LT1. Aprecharge signal PCG is transmitted to the gate electrode of thep-channel type MOS transistor 601. A signal PCG* obtained by logicallyinverting the precharge signal PCG is transmitted to the gate electrodeof the n-channel type MOS transistor 604.

The mismatch signal forming circuit 642 is provided corresponding to thelatch circuits 417-1 to 417-n, and includes a plurality of inputcircuits INC for fetching the output signal of the corresponding latchcircuit, an inverter 610 for fetching the output signals of the inputcircuits INC, an n-channel type MOS transistor 611 to be driven by theinverter 610, a latch circuit 651 to be driven by the n-channel type MOStransistor 611, and an n-channel type MOS transistor 614 for resettingthe latch circuit 651 based on a reset signal RESET2. As typically shownin an example of the structure of one of the input circuits INC, theyare formed by connecting two n-channel type MOS transistors 606 and 607in series. The output signal of a storage node LB1 in the latch circuit417-1 is transmitted to the gate electrode of the n-channel type MOStransistor 606. The logical inverted signal PCG* of the precharge signalPCG is transmitted to the gate electrode of the n-channel type MOStransistor 607.

FIG. 3 shows an example of the structure of the power controller 10.

As shown in FIG. 3, the power controller 10 includes a register 101, atiming generator 102, a control logic 103 and a comparing circuit 104.The register 101 is not particularly restricted but has a 4-bitstructure. In the register 101 having the 4-bit structure, a hold valueis updated synchronously with a clock signal CLK. An output value R[3:0]of the register 101 is transmitted to the control logic 103 and thecomparing circuit 104. The timing generator 102 sets a search requestsignal TG to have a high level at a constant ratio synchronously withthe clock signal CLK. The control logic 103 generates an update valueQ[3:0] of the register 101 in accordance with a truth table shown inFIG. 13. The comparing circuit 104 sets a search request signal PC_SE tohave a logical value of ‘1’ when the output value of the register 101 isa logical value of ‘0’.

FIG. 12 shows an example of the structure of the timing generator 102.

As shown in FIG. 12, the timing generator 102 includes a subtrahendcounter 121 having a 1-bit structure, a subtrahend counter 122 having a2-bit structure, a subtrahend counter 123 having a 3-bit structure, asubtrahend counter 124 having a 4-bit structure, OR gates 125 to 128,and an AND gate 129. Control signals C0 to C4 serve to carry out asearch rate control. The control signals C0 to C4 are supplied through aregister provided in a semiconductor chip or an external terminal. Inthe OR gates 125 to 128, the OR logic of the output signals of thecorresponding counters 121 to 124 and the control signals C0 to C4 isobtained. The AND gate 129 is obtained by the AND logic of the outputsignals of the OR gates 125 to 128.

Next, the operation of the structure will be described.

When a write enable signal WE is asserted to have a high level, thewrite amplifiers 405 and 407 are activated so that entry data having a72-bit structure can be written through the latch circuit 413. In thiscase, entry data corresponding to even number 36 bits are written to thefirst memory cell group 431 through the write amplifier 405 and entrydata corresponding to odd number 36 bits are written to the secondmemory cell group 432 through the write amplifier 407. In a state inwhich a search enable signal SE is asserted to have the high level,then, input comparison data and the entry data are compared with eachother. In the comparison, a data comparing operation corresponding tothe even number 36 bits and a data comparing operation corresponding tothe odd number 36 bits are carried out with age so that the pipelineprocessing of the comparing operation can be carried out as shown inFIG. 7. In FIG. 7, it is assumed that the comparison data are input inorder of CD0, CD1, CD2 and CD3. A comparing operation for an even numberbit CD1<0> of the comparison data and a comparing operation forcomparison data CD0<1> are carried out at the same time, a comparingoperation for an even number bit CD2<0> of the comparison data and acomparing operation of comparison data CD1<1> are carried out at thesame time, a comparing operation for an even number bit CD3<0> of thecomparison data and a comparing operation of comparison data CD2<1> arecarried out at the same time, and a comparing operation for an evennumber bit CD4<0> of the comparison data and a comparing operation ofcomparison data CD3<1>are carried out at the same time.

In the comparison, a precharge signal PCG is negated to have the highlevel. Consequently, the match signal lines ML1-1 to ML1-n are notprecharged. When comparison data corresponding to even number 36 bits inthe comparison data having the 72-bit structure are input to thecomparison data amplifier 404, the comparison data line CD is driven bythe comparison data amplifier 404 depending on the comparison datacorresponding to the even number 36 bits. One of the comparison datalines in the comparison data line CD having a complementary level is setto have the high level so that a comparison with data stored in eachmemory cell MC is carried out. In case of the memory cell of a ternarytype shown in FIG. 5, electric charges stored in the match signal lineML1-1 are discharged when data are mismatched. The state of the matchsignal line ML-1 is fetched into the latch circuit 417-1 synchronouslywith the clock signal CK1. The latch circuit 417-1 is previously resetin response to a reset signal RESET1 and the storage node LT1 has thehigh level. The storage node LT1 is changed to have a low level when thedata are matched with each other in the data comparison, and the storagenode LT1 is maintained to have the high level when the data aremismatched. The results of the comparison of entries 0 to 63 are held inthe corresponding latch circuits 417-1 to 417-n. In the control circuit409, the information collection of the latch circuits 417-1 to 417-n iscarried out through the input circuit INC. In the case in which at leastone matched entry is present, the match signal lines ML2-1 to ML2-ncorresponding thereto are precharged through the p-channel type MOStransistors 601 to 602 and a data comparison corresponding to the oddnumber 36 bits is then carried out. In other words, in the case in whichat least one matched entry is present, the input terminal of theinverter 610 has a high (H) level and the mismatch signal DIS has thehigh (H) level. In the comparison data amplifier 406, consequently,comparison data corresponding to odd number bits are supplied to thecorresponding comparison data lines through the AND gates 624 so thatthe entry data corresponding to the odd number 36 bits and thecomparison data corresponding to the odd number 36 bits are comparedwith each other.

In the comparison of the entry data corresponding to the even number 36bits with the comparison data corresponding to the even number 36 bits,however, it is implied that matched data with the input comparison dataare not present in the entry data of the CAM macro cell 40 when all ofthe entries 0 to 63 are mismatched, and the data comparisoncorresponding to the odd 36 bits is useless. For this reason, such acomparison is not carried out. More specifically, in the comparison ofthe entry data corresponding to the even number 36 bits with thecomparison data corresponding to the even number 36 bits, the mismatchsignal DIS is set to have a low (L) level and the AND gates 624 in thecomparison data amplifier 406 are brought into an inactive state whenall of the entries 0 to 63 are mismatched. Therefore, the comparisondata corresponding to the odd number bits are not transmitted to thecomparison data line.

In the structure shown in FIG. 6, the precharge is carried out throughthe p-channel type MOS transistor 602 in the control circuit 409. In themismatch entry, therefore, the match signal lines ML2-1 to ML2-ncorresponding thereto are not precharged. Accordingly, a region in whichthe comparison corresponding to the even number 36 bits including thematch entry is carried out and an odd number bit comparison target entryare activated by the comparing operation as shown in FIG. 10. Themismatch entry is not activated. Therefore, the number of the signallines to be activated in one cycle is decreased. Consequently, aconsumed power can be reduced.

In the timing generator 102 shown in FIG. 12, moreover, when the resetsignal RESET is input, the counters 121 to 124 are set to be ‘0’, ‘01’,‘011’ and ‘0111’ respectively. Every time the clock signal CLK is input,the counters 121 to 124 are subtracted by one. The counters 121 to 124are set to be circulating counters and are subtracted from 0,respectively. All of the bits have a logical value of ‘1’. The AND logicof the outputs of the OR gates 125 to 128 is taken and a logical outputthereof is obtained as TG. In the example, when at least one of the fourcounters 121 to 124 has a logical value of ‘0’, a search request is setto be the logical value of ‘1’. It is possible to set a search rate into16 stages in response to the control signals C0 to C3.

FIG. 14 shows a search rate and a source current in an LSI for a CAM.

While the source current is greatly changed for the search rate in theconventional art, the control signals C0 to C3 are set (programmed)corresponding to the maximum actual use search rate of a device usingthe LSI for a CAM and a dummy search is carried out so that the maximumcurrent of the LSI can be reduced, and furthermore, a fluctuation in thesource current can be reduced considerably in the example. Morespecifically, it is possible to reduce the source current as shown in anarrow 141 by making a division into a data comparison corresponding toeven number 36 bits and a data comparison corresponding to even number36 bits, and furthermore, it is possible to always consume a current bysuch a dummy search as to set the search rate to have a predeterminedvalue or more, thereby reducing the width of a fluctuation in the sourcecurrent as shown in an arrow 142.

FIG. 15 shows a relationship between a search request rate to the LSIfor a CAM and a CAM activation rate. The control signals C0 to C3 areset to be parameters. If nothing is done, the CAM activation rate isalso decreased in proportion to a reduction in the search request rate.On the other hand, the control signals C0 to C3 are properly set tocarry out the dummy search so that the CAM activation rate for thesearch request can be set to be constant. As shown in characteristiccurves A to Q in FIG. 15, when the values of the control signals C0 toC3 are increased, the CAM activation rate is stabilized within a widerange.

According to the example, the following functions and advantages can beobtained.

(1) In the control circuit 409, the precharge is carried out through thep-channel type MOS transistor 602. In the mismatch entry, therefore, thematch signal lines ML2-1 to ML2-n corresponding thereto are notprecharged. Accordingly, the region in which the comparisoncorresponding to the even number 36 bits including the match entry iscarried out and the odd number bit comparison target entry are activatedby the comparing operation as shown in FIG. 10. The mismatch entry isnot activated. Therefore, the number of the signal lines to be activatedin one cycle can be decreased. Consequently, a consumed power can bereduced.

(2) In the timing generator 102, when the reset-signal RESET is input,the counters 121 to 124 are set to be ‘0’, ‘01’, ‘011’and ‘0111’respectively. Every time the clock signal CLK is input, the counters 121to 124 are subtracted by one. The counters 121 to 124 are set to be thecirculating counters and are subtracted by 0, respectively. All of thebits have the logical value of ‘1’. The AND logic of the outputs of theOR gates 125 to 128 is taken and the logical output thereof is obtainedas TG. In the example, in the case in which at least one of the fourcounters 121 to 124 has the logical value of ‘0’, the search request isset to have the logical value of ‘1’. It is possible to set the searchrate into 16 stages in response to the control signals C0 to C3. Byproperly setting the control signals C0 to C3, it is possible to carryout the dummy search for reducing a fluctuation in a consumed current.

(3) The entry data corresponding to the even number 36 bits are writtento the first memory cell group 431 through the write amplifier 405 andthe entry data corresponding to the odd number 36 bits are written tothe second memory cell group 432 through the write amplifier 407. In thestate in which the search enable signal is asserted to have the highlevel, then, the input comparison data and the entry data are comparedwith each other. In the comparison, the data comparing operationcorresponding to the even number 36 bits and the data comparingoperation corresponding to the odd number 36 bits are carried out withage. Consequently, the pipeline processing of the comparing operationcan be carried out as shown in FIG. 7. Thus, it is possible toefficiently perform the search.

(4) In the CAM macro cell 40, the bit line BL is used for writing datato the memory cell MC and reading the data from the memory cell MC, andthe comparison data line CD for a data comparison is provided separatelytherefrom. Therefore, it is possible to fetch the comparison data byusing the comparison data line CD, thereby carrying out the data searchsimultaneously with the write of the data to the memory cell MC and theread of the data from the memory cell MC. In other words, it is possibleto carry out the dummy search for reducing a fluctuation in a consumedcurrent by properly setting the control signals C0 to C3 in theoperation for reading the data or the operation for writing the data.Therefore, it is possible to stabilize the consumed current of the LSIfor a CAM.

While the invention made by the inventor has specifically been describedabove, the invention is not restricted thereto but it is apparent thatvarious changes can be made without departing from a scope thereof.

For example, it is possible to employ the structure shown in FIG. 8 inplace of the structure shown in FIG. 6. FIG. 9 shows an operation timingin that case. The structure shown in FIG. 8 is greatly different fromthe structure shown in FIG. 6 in respect of the structures of theprecharge circuits 641 and the control of the operation of the encoder408 in response to the output signal of the mismatch signal formingcircuit 642. More specifically, a component corresponding to thep-channel type MOS transistor 602 in the circuit shown in FIG. 6 is notpresent in FIG. 8. In the structure shown in FIG. 8, accordingly, thematch signal lines ML2-1 to ML2-n are precharged irrespective of theresult of the data comparison corresponding to the even number 36 bits.As shown in FIG. 11, therefore, an odd number bit comparison nontargetentry is also activated in addition to the odd number bit comparisontarget entry.

In the case in which the results of the data comparison corresponding tothe even number 36 bits are mismatched in all of the entries in themacro cell, the comparison data for the data comparison corresponding tothe odd number 36 bits are not activated. For this reason, the matchsignal lines ML2-1 to ML2-n are maintained to have the high level andthe operating current does not flow. There is a possibility that thehigh level of the match signal lines ML2-1 to ML2-n might be mistakenfor “a data match”. Therefore, the encoder 408 is controlled by themismatch signal line DIS. In the case in which there is a matched entryin the data comparison corresponding to the even number 36 bits, thematch signal lines ML2-1 to ML2-n in the mismatch entry are set to havethe low level by a discharge synchronously with a timing pulse clocksignal CK2 after the match signal lines ML2-1 to ML2-n are precharged.Such a discharge is carried out in the encoder 408 based on the mismatchsignal DIS. Consequently, only the entry matched in the data comparisoncorresponding to the even number 36 bits becomes a data comparisontarget corresponding to the odd number 36 bits.

While the entry is divided into the even number bit and the odd numberbit in the example, moreover, it may be divided into an upper side bitand a lower side bit in the data and the division of the entry is notrestricted to two parts but the entry can be divided into a plurality ofbit portions.

In the case in which the CAM macro cells 40 are arranged in an array asshown in FIG. 2, furthermore, they can be operated synchronously with acommon clock signal. Such an embodiment will be described with referenceto FIGS. 16 to 29.

FIG. 16 shows another example of the structure of the CAM macro cellarray 4. In FIG. 16, a division into four blocks BK0, BK1, BK2 and BK3having a 128-entry by 576-bit structure is carried out and four encoderportions ED00, ED10, ED20 and ED30 are provided corresponding to thefour blocks BK0, BK1, BK2 and BK3, which is not particularly restricted.The four encoder portions ED00, ED10, ED20 and ED30 are equivalent tothe priority encoder 5 in FIG. 1. Each of the four blocks BK0, BK1, BK2and BK3 is divided into four subblocks. More specifically, the block BK0is divided into four subblocks SB00, SB01, SB02 and SB03, the block BK1is divided into four subblocks SB10, SB11, SB12 and SB13, the block BK2is divided into four subblocks SB20, SB21, SB22 and SB23, and the blockBK3 is divided into four subblocks SB30, SB31, SB32 and SB33.

Comparison data d[0] to d[576] are divided into four parts and are inputto each subblock on a 144-bit unit. In other words, data d[0] to d[143]are input to the subblocks SB00, SB10, SB20 and SB30, data d[144] tod[287] are input to the subblocks SB01, SB11, SB21 and SB31, data d[288]to d[431] are input to the subblocks SB02, SB12, SB22 and SB32, and datad[432] to d[575] are input to the subblocks SB03, SB13, SB23 and SB33.The data d[0] to d[143] are exactly input to the subblocks SB00, SB10,SB20 and SB30, the data are input to the subblocks SB01, SB11, SB21 andSB31 via the latch circuit LC in one stage, the data are input to thesubblocks SB02, SB12, SB22 and SB32 via the latch circuit LC in twostages, and the data are input to the subblocks SB03, SB13, SB23 andSB33 via the latch circuit LC in three stages.

FIG. 17 shows an example of the structure of SB00 to be one of thesubblocks.

The subblock SB00 is not particularly restricted but includes 144 setsof comparison data line pairs CDAT and CDAB provided corresponding tothe input data d[0] to d[143], 128 match signal lines ML provided tocross them, a memory cell MC provided in the cross portion of thecomparison data line pair CDAT and CDAB and the match signal lines, abuffer 704 provided corresponding to the 128 match signal lines ML, aplurality of latch circuits 705 capable of latching the output signal ofthe buffer 704 based on an activating pulse signal, and a control logic706 capable of supplying, to the subblock SB01 in a latter stage, amatch signal MCH which can decide whether or not the input data arematched with entry data and row system search results ROW0 to ROW127based on the output signals of the latch circuits 705. 144 data lines DLare provided corresponding to the input data d[0] to d[143]. A latchcircuit 707 is coupled to the input data d[0] to d[143]. 3-input ANDgates 701 and 702 are coupled to the comparison data line pair CDAT andCDAB, respectively. The data are input to the data lines DL through thecorresponding latch circuit 707. The input data are transmitted to thecorresponding AND gate 701, and furthermore, are logically inverted by acorresponding inverter 703 and are then transmitted to the correspondingAND gate 702. In the AND gate 701, the AND logic of the match signalMCH, the search pulse RCP and the input data d [0] which are transmittedfrom the former stage is obtained and is transmitted to the comparisondata line CDAT. In the AND gate 702, moreover, the AND logic of thematch signal MCH, the search pulse RCP and the output signal of theinverter 703 which are transmitted from the former stage is obtained andis supplied to the comparison data line CDAB. The search pulse RCP andthe activating pulse ACP are formed synchronously with the clock signalCK. The data lines DL are coupled to the subblock SB10 in the block BK1of the latter stage and the data d[0] to d[143] can be supplied to aplurality of subblocks through the corresponding data lines DL.

FIG. 18 shows an example of the structure of the encoder portion ED10.

The encoder portion ED10 is not particularly restricted but includes apriority encode portion 801, a pulse generator circuit 803, aninterblock priority control circuit 802, a buffer 804 and a latchcircuit 805.

The priority encode portion 801 outputs the match signal MCH in theblock BK1, a match address Add thereof, and a multiple match signal PMCHindicative of a multiple match based on the search results (thecomparison results of the comparison data and the entry data) ROW0 toROW127 and the match signal MCH in the subblocks SB00 to SB03.

The pulse generator circuit 803 forms the search pulse signal RCP andthe activating pulse signal ACP synchronously with the clock signal CLK.Moreover, the latch circuit 805 fetches a detection result (the matchsignal MCH, the match address signal Add and the multiple match signalPMCH) sent from the block BK0 in the former stage synchronously with theclock signal CLK and transmits the same detection result to theinterblock priority control circuit 802. The clock signal CLK istransmitted through the buffer 804 to the encoder portion ED20 in theblock BK2 of the latter stage.

The other encoder portions ED00, ED20 and ED30 are also constituted inthe same manner as the encoder portion ED10.

FIG. 19 shows an example of the structure of the interblock prioritycontrol circuit 802.

The interblock priority control circuit 802 is not particularlyrestricted but includes a selector 811 and OR gates 812 and 813. Theselector 811 selectively outputs, to the block (BK2) in the latterstage, the match address transmitted from the block (BK0) in the formerstage and the match address Add sent from the encoder portion ED10 inthe block BK1. The OR gate 812 takes the OR logic of the multiple matchsignal MCH transmitted from the block in the former stage and themultiple match signal PMCH transmitted from the encoder portion ED10 inthe block BK1 and outputs the same OR logic to the block (BK2) in thelatter stage. When the match signal MCH sent from the block in theformer stage has a high level (active), the match address signaltransmitted from the block in the former stage by the selector 811 isselectively output to the block in the latter stage.

FIG. 20 shows the timing of a search operation in the CAM macro cellarray 4. FIG. 21 shows the order of the search operation in the CAMmacro cell array 4. In FIG. 20, a bit

A implies a bit of [0:143], a bit B implies a bit of [144:287], a bit Cimplies a bit of [288:431], and a bit D implies a bit of [432:575].

In the structure described above, comparison data input for a search arefetched to the block BK0 through the latch circuit 707 to be operatedsynchronously with the clock signal CLK and are compared with entrydata. Then, the comparison data are transmitted to a next block. 144bits in the 576 bits are searched in the first subblock SB00 (acomparing operation). If match data are not present, the comparingoperation is not carried out in the subsequent subblocks SB01, SB02 andSB03. On the other hand, referring to the comparison, next 144 bits arecompared in the next subblock SB01 in a subsequent cycle if the matchdata are present. Thus, the pipeline processing is sequentially carriedout synchronously with the clock signal CLK.

On the other hand, the comparing operation is executed after one cycleby using a search result transferred from the block BK0 also in theblock BK1. A search result obtained in each of the blocks is transferredto the corresponding encoder portions ED00 to ED30, and a match addressis calculated and is output together with a match signal. At this time,if the match data are present in the block of the former stage, thematch address output from the block in the former stage is outputpreferentially by the selecting operation of the selector 811. Each ofthe blocks has an input terminal provided on a lower side thereof and anoutput terminal provided on an upper side thereof. When the number ofentries is set to be 512, four blocks are arranged in a verticaldirection so that a CAM macro cell having a 512-entry by 576-bitstructure is implemented. Referring to the CAM macro cell array 4 in theexample, search data are divided in a transverse direction (a directionof an arrow X in FIG. 16) and an entry is divided in a verticaldirection (a direction of an arrow Y in FIG. 16), and they are pipelineoperated synchronously with the clock signal CLK, respectively. Thus,the pipeline operation is carried out synchronously with the clocksignal CLK. Therefore, it is possible to enhance a search throughput inthe CAM macro cell array 4. In addition to such an enhancement in thesearch throughput, furthermore, the comparing operation is not carriedout in a subsequent subblock if the match data are not present.Therefore, it is possible to reduce a consumed power in the CAM macrocell array 4 in the same manner as in the structures shown in FIGS. 4and 6. Moreover, it is possible to easily increase the number of theentries in the vertical direction (in the direction of the arrow Y)while maintaining the search throughput.

In the case in which one data having a 576-bit structure are to besearched as shown in FIG. 21, the subblock SB00 is searched in a firstcycle and the subblock SB01 and the subblock SB10 are searched in a nextcycle (a second cycle). In a subsequent cycle, the subblock SB02, thesubblock SB11 and the subblock SB20 are searched. In the example, awhole search result is output after 8 cycles. When this is pipelineoperated, a part of divided bits in the same input data or a differententry is searched in a subblock in an nth cycle. Moreover, input dataare delayed corresponding to a transfer delay between the blocks and arethus sent to a closer block to an output side. However, the clock signalCLK is also delayed corresponding to the transfer delay between theblocks. For this reason, their relative relationship is not changed. Ifa timing design is carried out in one block, therefore, a timing on aninput terminal in each of the blocks is identical between the blocksirrespective of a structure in which the blocks are arranged.Consequently, it is possible to easily expand the entry.

As another example of the structure in the CAM macro cell array 4,moreover, the blocks may be pipeline operated alternately andsynchronously with the leading and trailing edges of a clock in astructure constituted by the blocks. FIG. 22 shows an example of thestructure of the CAM macro cell array 4 in that case. Inverters 851 and852 capable of inverting the logic of clock signals input to the blockBK1 and the block BK3 are provided, and the block BK1 and the block BK3are operated synchronously with the trailing edge of the clock signalCLK. FIG. 23 shows the order of an operation in this case, and FIG. 24shows an operation timing in that case. In FIG. 24, a bit A implies abit of [0:143], a bit B implies a bit of [144:287], a bit C implies abit of [288:431], and a bit D implies a bit of [432:575]. In the blockBK1, the subblock SB10 is operated in a 1.5th cycle, the subblock SB11is operated in a 2.5th cycle, the subblock SB12 is operated in a 3.5thcycle, the subblock SB13 is operated in a 4.5th cycle, and the encoderportion ED10 is operated in a 5.5th cycle. In the block BK3, moreover,the subblock SB30 is operated in a 2.5th cycle, the subblock SB31 isoperated in a 3.5th cycle, the subblock SB32 is operated in a 4.5thcycle, the subblock SB33 is operated in a 5.5th cycle, and the encoderportion ED30 is operated in a 6.5th cycle. Such an operation can becarried out when a transfer time between the blocks is short, and alatency can be shortened. Referring to an operating current, moreover, atiming for a peak in the cycle can be distributed. Therefore, afluctuation in a power supply can be reduced.

In a division in the direction of search data, furthermore, the subblockmay be divided into a plurality of mats. FIG. 25 shows an example of thestructure of the CAM macro cell array 4 in this case.

In the example of the structure shown in FIG. 25, each of the subblocksis divided into two parts including a block A and a block B. In each ofthe subblocks, data input to the block A do not pass through the latchcircuit, while data input to the block B pass through the latch circuitLC to be operated synchronously with the clock signal CLK by only onestage. For this reason, the data are input to the block A and the blockB in each of the subblocks with a shift of one cycle.

FIG. 27 shows an example of the structure of the subblock SB00. As shownin FIG. 27, the subblock SB00 is provided with a control logic 912between a mat A and a mat B, and the signals of a plurality of matchsignal lines ML in the mat A are transmitted to the control logic 912through a buffer 910 and a latch circuit 911 which correspondrespectively. The latch circuit 911 is operated synchronously with anactivating pulse (ACP). The function of the control logic 912 is set tobe basically identical to that of the control logic 706 in FIG. 17 anddecides whether or not input data and entry data are matched with eachother based on the logic of the match signal lines ML in the mat A. Amatch signal output from the control logic 912 is supplied to one of theinput terminals of a 3-input AND gate in the mat B. When the data aremismatched in the mat A, a comparison in the mat B is prohibited so thata consumed power can be reduced. The other subblocks are alsoconstituted in the same manner as the subblock SB00 shown in FIG. 27.

An intersubblock search result totaling logic portion 901 is providedbetween the subblocks SB00, SB10, SB20 and SB30 and the subblocks SB01,SB11, SB21 and SB31, an intersubblock search result totaling logicportion 902 is provided between the subblocks SB01, SB11, SB21 and SB31and the subblocks SB02, SB12, SB22 and SB32, and an intersubblock searchresult totaling logic portion 903 is provided between the subblocksSB02, SB12, SB22 and SB32 and the subblocks SB03, SB13, SB23 and SB33.The intersubblock search result totaling logic portions 901 to 903obtain the AND logic of the corresponding intersubblock search results.

FIG. 28 shows an example of the structure of the intersubblock searchresult totaling logic portion 901. As shown in FIG. 28, theintersubblock search result totaling logic portion 901 is constituted toinclude a plurality of 2-input, AND gates for logically synthesizing thesearch results of the subblocks. For example, an AND gate 921 obtainsthe AND logic of the ROW0 search result of the subblock SB00 and theROW01 search result of the subblock SB01. An AND gate 922 obtains theAND logic of the ROW0 search result of the subblock SB02 and the ROW0search result of the subblock SB03. An AND gate 923 obtains the ANDlogic of the AND gate 921 and the AND gate 922. The output signal of theAND gate 923 is set to be the ROW0 search result in the block BK0.Moreover, an AND gate 924 obtains the AND logic of the ROW127 searchresult of the subblock SB00 and the ROW127 search result of the subblockSB01. An AND gate 925 obtains the AND logic of the ROW127 search resultof the subblock SB02 and the ROW127 search result of the subblock SB03.An AND gate 926 obtains the AND logic of the AND gate 924 and the ANDgate 925. The output signal of the AND gate 926 is set to be the ROW127search result in the block BK0.

FIG. 29 shows the operation timing of a main part in the structure shownin FIG. 25. In FIG. 29, a bit E implies a bit of [0:71], a bit of[144:215], a bit of [288:359] and a bit of [432:503], and a bit Fimplies a bit of [72:143], a bit of [216:287], a bit of [360:431] and abit of [504:575].

In the structure described above, a processing in the direction ofsearch data is set to be a pipeline processing in each of a plurality ofsubblocks obtained by a division. Referring to a search result in eachof the subblocks, an AND logic is taken in the intersubblock searchresult totaling logic portion and it is decided whether or not 576-bitdata are matched with entry data. A mat A in each of the subblocks ofthe first block BK0 is searched, and a mat B is not searched if matchdata are not present. If the match data are present, the mat B issearched in a next cycle. The direction of an entry is the same as thatin the example and is different from that in the example in that thepipeline operation is carried out for each block with a shift of onecycle.

It is also possible to carry out a synchronization with the leading andtrailing edges of a clock as in the example described above.Consequently, it is possible to reduce the latency of a searchoperation. In addition, since a search operation area is distributedinto the macro, a fluctuation in a power supply can be reduced.

While the above description has been given to the case in which theinvention made by the inventor is mainly applied to an LSI for a CAM tobe a utilization field which is the background of the invention, theinvention is not restricted thereto but can be applied to various LSIs.

The invention can be applied on the condition that at least thecomparison of comparison data with entry data is made.

Advantages obtained by the typical invention disclosed in theapplication will be briefly described below.

More specifically, it is possible to reduce the consumed power of asemiconductor memory device by decreasing the number of signal lines tobe activated in one cycle of a comparing operation.

Moreover, it is possible to reduce a fluctuation in a consumed currentby always causing a current to flow through a search operation.

Furthermore, a pipeline operation is carried out between a plurality ofblocks synchronously with a clock signal and a processing of comparingthe bit of a latter stage portion in entry data with the correspondingbit of the comparison data is also pipeline operated synchronously withthe clock signal. Consequently, the throughput of a CAM portion can beenhanced. In addition, the number of the signal lines to be activated inone cycle of the comparing operation is decreased as described above.Thus, it is possible to reduce the consumed power of a semiconductormemory device.

1-11. (canceled)
 12. A semiconductor memory device which includes a CAMportion capable of holding entry data, and can compare input comparisondata with the entry data and can output a result of the comparison,comprising: a controller for generating a search request to the CAMportion, the controller including search rate setting means capable ofsetting a search rate having a level for suppressing a fluctuation in acurrent. 13-17. (canceled)
 18. The semiconductor memory device accordingto claim 12, wherein the controller supplies a power control searchenable signal to the CAM portion to generate a dummy search request tothe CAM portion so that a search rate of the CAM portion has apredetermined value or more.
 19. The semiconductor memory deviceaccording to claim 12, wherein the CAM portion comprises a comparisondata amplifier which amplifies comparison data and supplies theamplified comparison data to comparison data lines; wherein thecontroller comprises a register, a timing generator, a control logic anda comparing circuit; wherein the timing generator supplies a signal tothe control logic at a constant ratio synchronously with the clocksignal; wherein the control logic generates an update value of theregister in accordance with a truth table when the control logicreceives the signal; wherein the comparing circuit sets a search requestsignal when the value of the register is a predetermined value; andwherein the comparison data amplifier is activated based on the searchrequest signal.
 20. The semiconductor memory device according to claim19, wherein a search enable signal based on the search request signalindicates validity of a comparing operation.
 21. A semiconductor memorydevice comprising, a CAM macro cell array; and a power controller;wherein the CAM macro cell array comprises a comparison data amplifierwhich amplifies comparison data and supplies the comparison data tocomparison data lines; wherein the power controller comprises aregister, a timing generator, a control logic and a comparing circuit;wherein the timing generator supplies a signal to the control logic at aconstant ratio synchronously with the clock signal; wherein the controllogic generates an update value of the register in accordance with atruth table when the control logic receives the signal; wherein thecomparing circuit sets a search request signal when the value of theregister is a predetermined value; and wherein the comparison dataamplifier is activated based on the search request signal.
 22. Thesemiconductor memory device according to claim 21, wherein a searchenable signal based on the search request signal indicates validity of acomparing operation.
 23. A semiconductor memory device which includes aCAM portion capable of holding entry data, and can compare inputcomparison data with the entry data and can output a result of thecomparison, comprising: a controller for generating a search request tothe CAM portion, the controller being operable to set a search ratehaving a level for suppressing a fluctuation in a current.
 24. Thesemiconductor memory device according to claim 23, wherein thecontroller supplies a power control search enable signal to the CAMportion to generate a dummy search request to the CAM portion so that asearch rate of the CAM portion has a predetermined value or more. 25.The semiconductor memory device according to claim 23, wherein the CAMportion comprises a comparison data amplifier which amplifies comparisondata and supplies the amplified comparison data to comparison datalines; wherein the controller comprises a register, a timing generator,a control logic and a comparing circuit; wherein the timing generatorsupplies a signal to the control logic at a constant ratio synchronouslywith the clock signal; wherein the control logic generates an updatevalue of the register in accordance with a truth table when the controllogic receives the signal; wherein the comparing circuit sets a searchrequest signal when the value of the register is a predetermined value;and wherein the comparison data amplifier is activated based on thesearch request signal.
 26. The semiconductor memory device according toclaim 25, wherein a search enable signal based on the search requestsignal indicates validity of a comparing operation.